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|Title:||Modeling of PSD based on Schottky-barrier junction|
|Authors:||Tan, C;Lin, B;Chen, D;Chen, Y|
|subject:||P-N Junction;Psd;Responsibility;Schottky Structure|
|Publisher:||S P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedings|
|Description:||Position Sensitive Detector (PSD) is a position sensor utilizing the lateral photoelectric effect produced by the non-uniform illumination of a rectifying semiconductor junction. Recently, mostly researches of PSD focus on the linear requirements or response characters of PSD with p-n junction. However, this paper concentrates on a novel characteristics of PSD based on the Schottky junction. This junction has many distinguished traits comparing with the p-n junction. Since the intrinsic excellent characteristics, the Schottky PSD has faster response and higher sensitivity to the incident radiation, lager current density, low current leakage and so on. This paper provides an analysis and model of the Schottky-barrier PSD lateral potential creation, response characteristic and position linearity condition with the Schottky junction, which is deduced by the charge conversation law and the model of carriers transport. All the study work is the theoretical basis for design of this junction with better performance.|
|Standard no:||Proceedings of SPIE - The International Society for Optical Engineering, 2005, v. 5644 PART 1, p. 15-20|
|Appears in Collections:||Department of Anatomy|
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